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专利名称：Method of manufacturing transparent
conductor film and compound
semiconductor light -emitting device withthe film
发明人：Takao Nakamura,Hideki Matsubara申请号：US10224930申请日：20020820
公开号：US20030166308A1公开日：20030904
专利附图：
摘要：A light emitting-layer is provided on a substrate. A p-type semiconductor layer
is provided on the light-emitting layer. An upper electrode is provided on the p-typesemiconductor layer. The upper electrode includes an Au thin film coming into contactwith the p-type semiconductor layer and an n-type transparent conductor film formedthereon. The n-type transparent conductor film is formed by laser ablation. Particularly,the method involves placing a substrate in a vacuum chamber, placing a target of the filmmaterial in the chamber, introducing oxygen into the chamber, laser-irradiating the targetto emit atoms or molecular ions by ablation, and then depositing and oxidizing the atomsor ions to grow the transparent conductor film.
申请人：SUMITOMO ELECTRIC INDUSTRIES, LTD.
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