P130NH02L资料

STB130NH02LSTP130NH02L

N-CHANNEL 24V - 0.0034 Ω - 120A D²PAK/TO-220

STripFET™ III POWER MOSFET FOR DC-DC CONVERSION

Table 1: General Features

TYPESTB130NH02LSTP130NH02L

■■■■■■■

Figure 1:PackageRDS(on)< 0.0044 Ω< 0.0044 Ω

ID90 A(2)90 A(2)

VDSS24 V24 V

TYPICAL RDS(on) = 0.0034 Ω @ 10 VTYPICAL RDS(on) = 0.005 Ω @ 5 V

RDS(ON) * Qg INDUSTRY’s BENCHMARKCONDUCTION LOSSES REDUCEDSWITCHING LOSSES REDUCEDLOW THRESHOLD DEVICE

SURFACE-MOUNTING D2PAK (TO-263)

POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”)

13123TO-263(Suffix “T4”)D2PAKTO-220DESCRIPTION

The STB_P130NH02L utilizes the latest advanceddesign rules of ST’s proprietary STripFET™ technology.It is ideal in high performance DC-DC converterapplications where efficiency is to be achieved at veryhigh output currents.

Figure 2: Internal Schematic DiagramAPPLICATIONS

■SYNCHRONOUS RECTIFICATIONS FOR TELECOM AND COMPUTER■OR-ING DIODE

Table 2: Ordering Information

SALES TYPESTB130NH02LT4STP130NH02LMARKINGB130NH02LP130NH02LPACKAGETO-263TO-220PACKAGINGTAPE & REELTUBEABSOLUTE MAXIMUM RATINGS

SymbolVspike(1)VDSVDGRVGSID(2)ID(2)IDM(3)PtotEAS (4)TstgTj

Parameter

Drain-source Voltage RatingDrain-source Voltage (VGS = 0)Drain-gate Voltage (RGS = 20 kΩ)Gate- source Voltage

Drain Current (continuous) at TC = 25°CDrain Current (continuous) at TC = 100°CDrain Current (pulsed)

Total Dissipation at TC = 25°CDerating Factor

Single Pulse Avalanche EnergyStorage Temperature

Max. Operating Junction TemperatureValue302424± 2090903601501900-55 to 175

UnitVVVVAAAWW/°CmJ°C1/13

April 2005

Rev. 2.0

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STB130NH02L STP130NH02L

Table 4: THERMAL DATA

Rthj-caseRthj-amb

Tl

Thermal Resistance Junction-caseThermal Resistance Junction-ambient

Maximum Lead Temperature For Soldering Purpose

MaxMax

1.062.5300

°C/W°C/W°C

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

Table 5: OFF

SymbolV(BR)DSSIDSSIGSS

Parameter

Drain-source

Breakdown VoltageZero Gate Voltage

Drain Current (VGS = 0)Gate-body LeakageCurrent (VDS = 0)

Test Conditions

ID = 25 mA, VGS = 0VDS = 20 VVDS = 20 VVGS = ± 20 V

Min.24

110±100

Typ.

Max.

UnitVµAµAnA

TC = 125°C

Table 6: ON (*)

SymbolVGS(th)RDS(on)

Parameter

Gate Threshold VoltageStatic Drain-source On Resistance

Test Conditions

VDS = VGS VGS = 10 V VGS = 5 V

ID = 250 µAID = 45 AID = 22.5 A

Min.1

0.00340.005

0.00440.008

Typ.

Max.

UnitVΩΩ

Table 7: DYNAMIC

Symbolgfs (5)CissCossCrssRG

Parameter

Forward TransconductanceInput CapacitanceOutput CapacitanceReverse Transfer Capacitance

Gate Input Resistance

Test Conditions

VDS = 10 V

ID=45A

Min.

Typ.55445011261411.6

Max.

UnitSpFpFpFΩ

VDS = 15V f = 1 MHz VGS = 0

f = 1 MHz Gate DC Bias = 0 Test Signal Level = 20 mV Open Drain

2/13

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STB130NH02L STP130NH02L

ELECTRICAL CHARACTERISTICS (continued)

Table 8: SWITCHING ON

Symboltd(on)trQgQgsQgdQoss(6)Qgls(7)

Parameter

Turn-on Delay TimeRise Time

Total Gate ChargeGate-Source ChargeGate-Drain ChargeOutput Charge

Third-quadrant Gate Charge

Test Conditions

VDD = 10 V ID = 45 A

VGS = 10 VRG=4.7 Ω

(Resistive Load, Figure )VDD=10 V ID=90 A VGS=10 V

Min.

Typ.142246913927

93Max.

UnitnsnsnCnCnCnCnC

VDS= 16 V VGS= 0 VVDS< 0 V VGS= 10 V

Table 9: SWITCHING OFF

Symboltd(off)tf

Parameter

Turn-off Delay TimeFall Time

Test Conditions

VDD = 10 VID = 45 A

VGS = 10 VRG=4.7Ω,

(Resistive Load, Figure 3)

Min.

Typ.6940

Max.54

Unitnsns

Table 10: SOURCE DRAIN DIODE

SymbolISDISDMVSD (5)trrQrrIRRM

Parameter

Source-drain Current

Source-drain Current (pulsed)Forward On VoltageReverse Recovery TimeReverse Recovery ChargeReverse Recovery Current

ISD = 45 A VGS = 0ISD = 90 Adi/dt = 100A/µs

Tj = 150°CVDD = 15 V

(see test circuit, Figure 5)

47582.5

Test Conditions

Min.

Typ.

Max.903601.3

UnitAAVnsnCA

(1) Garanted when external Rg=4.7 Ω and tf < tfmax. (5) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.(2) Value limited by wire bonding (6) Qoss = Coss*∆ Vin , Coss = Cgd + Cds . See Appendix A(3) Pulse width limited by safe operating area. (7) Gate charge for synchronous operation(4) Starting Tj = 25 oC, ID = 45A, VDD = 10V .

Figure 3: Safe Operating AreaFigure 4: Thermal Impedance3/13

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STB130NH02L STP130NH02L

Figure 5: Output CharacteristicsFigure 6: Transfer CharacteristicsFigure 7: TransconductanceFigure 8: Static Drain-source On ResistanceFigure 9: Gate Charge vs Gate-source VoltageFigure 10: Capacitance Variations4/13元器件交易网www.cecb2b.com

STB130NH02L STP130NH02L

Figure 11: Normalized Gate Threshold Voltage vs TemperatureFigure 12: Normalized on Resistance vs TemperatureFigure 13: Source-drain Diode Forward CharacteristicsFigure 14: Normalized Breakdown Voltage vs Temperature..5/13

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STB130NH02L STP130NH02L

Figure 15: Unclamped Inductive Load Test Circuit

Figure 16: Unclamped Inductive Waveformtive LoadFigure 17: Switching Times Test Circuits For Resis-

Figure 18: Gate Charge test CircuitFigure 19: Test Circuit For Inductive Load Switch-

ing And Diode Recovery Times6/13

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STB130NH02L STP130NH02L

TO-220 MECHANICAL DATADIM.ACDEFF1F2GG1H2L2L3L4L5L6L7L9DIA

132.6515.256.203.503.75

mm.

MIN.4.41.232.400.490.611.141.144.952.4010

16.4028.90

142.9515.756.603.933.85

0.5110.1040.6000.2440.1370.147

TYP. MAX.4.61.322.720.700.881.701.705.152.7010.40

MIN.0.1730.0480.0940.0190.0240.0440.0440.1940.0940.393

0.51.137

0.5510.1160.6200.2600.1540.151

inch.

TYP. TYP.

0.1810.0510.1070.0270.0340.0670.0670.2030.1060.409

7/13

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STB130NH02L STP130NH02L

D2PAK MECHANICAL DATADIM.AA1A2BB2CC2DD1EE1GLL2L3MRV2

0°4.88151.271.42.4

0.4

8°

0°

10

8.5

5.2815.851.41.753.2

0.1920.5910.0500.0550.094

0.015

8°

mm.

MIN.4.42.490.030.71.140.451.218.95

8

10.4

0.394

0.334

0.2080.6240.0550.0690.126

TYP. MAX.4.62.690.230.931.70.61.369.35

MIN.0.1730.0980.0010.0280.0450.0180.0480.352

0.315

0.409

inch.

TYP. TYP.

0.1810.106

0.0090.0370.0670.0240.0540.368

8/13

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STB130NH02L STP130NH02L

D2PAK FOOTPRINTTUBE SHIPMENT (no suffix)*

TAPE AND REEL SHIPMENT (suffix ”T4”)*

REEL MECHANICAL DATA

DIM.ABCDGNT

1.512.820.224.4100

30.4

BASE QTY1000

26.413.2mmMIN.

MAX.330

0.0590.5040.7950.9603.937

1.197BULK QTY10001.0390.520

MIN.

inch

MAX.12.992

TAPE MECHANICAL DATA

DIM.A0B0DD1EFK0P0P1P2RTW

mmMIN.10.515.71.51.591.6511.44.83.911.91.9500.2523.7

0.3524.3MAX.10.715.91.61.611.8511.65.04.112.12.1

MIN.0.4130.6180.0590.0620.0650.4490.10.1530.46800751.574.0.00980.933

0.01370.956inch

MAX.0.4210.6260.0630.0630.0730.4560.1970.1610.4760.082

* on sales type

9/13

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STB130NH02L STP130NH02L

APPENDIX ABuck Converter: Power Losses EstimationSW1SW2The power losses associated with the FETs in a Synchronous Buck converter can beestimated using the equations shown in the table below. The formulas give a goodapproximation, for the sake of performance comparison, of how different pairs of devices affect the converter efficiency. However a very important parameter, the workingtemperature, is not considered. The real device behavior is really dependent on how theheat generated inside the devices is removed to allow for a safer working junctiontemperature.The low side (SW2) device requires:• • • • • Very low RDS(on) to reduce conduction lossesSmallQgls to reduce the gate charge losses Small Coss to reduce losses due to output capacitanceSmall Qrr to reduce losses on SW1 during its turn-onThe Cgd/Cgs ratio lower than Vth/Vgg ratio especially with low drain to sourcevoltage to avoid the cross conduction phenomenon;The high side (SW1)device requires:• Small Rg and Ls to allow higher gate current peak and to limit the voltagefeedback on the gate • Small Qg to have a faster commutation and to reduce gate charge losses• Low RDS(on) to reduce the conduction losses.10/13

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STB130NH02L STP130NH02L

High Side Switch (SW1)Low Side Switch (SW2)PconductionRDS(on)SW1*I2L*δRDS(on)SW2*I2L*(1−δ)PswitchingVin*(Qgsth(SW1)+Qgd(SW1))*f*ILIgZero Voltage SwitchingPdiodeRecoveryConductionNot ApplicableNot Applicable1Vin*Qrr(SW2)*fVf(SW2)*IL*tdeadtime*fQgls(SW2)*Vgg*fPgate(QG)Qg(SW1)*Vgg*fPQossVin*Qoss(SW1)*f2Vin*Qoss(SW2)*f2ParameterdQgsthQglsPconductionPswitchingPdiodePgatePQossMeaningDuty-cyclePost threshold gate charge Third quadrant gate chargeOn state lossesOn-off transition lossesConduction and reverse recovery diode lossesGate drive lossesOutput capacitance losses1Dissipated by SW1 during turn-on11/13元器件交易网www.cecb2b.com

STB130NH02L STP130NH02L

Table 11:Revision History

Date

April 2005

Revision

2.0

Description of Changes

ADDED PACKAGE TO-220

12/13

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STB130NH02L STP130NH02L

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is grantedby implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subjectto change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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