专利内容由知识产权出版社提供
专利名称：Power semiconductor device发明人：Oh, Jung Hun申请号：EP13179593.2申请日：20130807公开号：EP2731143A2公开日：20140514
专利附图：
摘要：A power semiconductor device is disclosed. The power semiconductor deviceincludes a source electrode (161), a drain electrode (162), and a gate electrode (163)between the source electrode and the drain electrode, a third semiconductor layer (150)disposed under the source electrode and the drain electrode and having an open region
with a width corresponding to a length of the gate electrode, a second semiconductorlayer (130) disposed under the third semiconductor layer and connected to the gateelectrode through the open region; and a first semiconductor layer (120) under thesecond semiconductor layer, wherein the third semiconductor layer comprises a firstregion (150-1) adjacent to the gate electrode, a second region (150-2) adjacent to thedrain electrode, and a third region (150-3) between the first region and the secondregion, and the third region electrically separates the first region from the secondregion.
申请人：LG Innotek Co., Ltd.
地址：Seoul Square 20F Namdaemunno 5-ga Jung-gu Seoul 100-714 KR
国籍：KR
代理机构：Zardi, Marco
更多信息请下载全文后查看
