MITSUBISHI IGBT MODULESCM200DY-24HHIGH POWER SWITCHING USEINSULATED TYPEABFFGPC2E1E2C1G2E2CDG1E1JPKN - DIA. (4 TYP.)MMQ - M6 THD (3 TYP.)RTAB#110 t=0.5L EHDescription:Mitsubishi IGBT Modules are de-signed for use in switching applica-tions. Each module consists of twoIGBTs in a half-bridge configurationwith each transistor having a re-verse-connected super-fast recov-ery free-wheel diode. All compo-nents and interconnects are iso-lated from the heat sinking base-plate, offering simplified system as-sembly and thermal management.Features:ٗLow Drive PowerٗLow VCE(sat)ٗDiscrete Super-Fast RecoveryFree-Wheel DiodeٗHigh Frequency OperationٗIsolated Baseplate for EasyHeat SinkingApplications:ٗAC Motor ControlٗMotion/Servo ControlٗUPSٗWelding Power SuppliesOrdering Information:Example: Select the complete partmodule number you desire fromthe table below -i.e. CM200DY-24His a 1200V (VCES), 200 AmpereDual IGBT Module.TypeCMCurrent RatingAmperes200VCESVolts (x 50)24MG2E2C2E1E2C1E1G1Outline Drawing and Circuit DiagramDimensionsABCDEFGHInches4.253.66±0.012.441.±0.011.22 Max.0.980.850.60Millimeters108.093.0±0.2562.048.0±0.2531.0 Max.25.021.515.2DimensionsJKLMNPQRInches0.590.550.300.280.256 Dia.0.24M6 Metric0.20Millimeters15.014.08.57.0Dia. 6.56.0 M65.0Sep.1998
MITSUBISHI IGBT MODULES
CM200DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specifiedRatingsJunction TemperatureStorage TemperatureCollector-Emitter Voltage (G-E SHORT)Gate-Emitter Voltage (C-E SHORT)Collector Current (TC = 25°C)Peak Collector CurrentEmitter Current** (TC = 25°C)Peak Emitter Current**Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)Mounting Torque, M6 Main TerminalMounting Torque, M6 MountingWeightIsolation Voltage (Main Terminal to Baseplate, AC 1 min.)*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).SymbolTjTstgVCESVGESICICMIEIEMPc–––VisoCM200DY-24H–40 to 150–40 to 1251200±20200400*200400*15001.96 ~ 2.941.96 ~ 2.944002500Units°C°CVoltsVoltsAmperesAmperesAmperesAmperesWattsN · mN · mGramsVrmsStatic Electrical Characteristics, Tj = 25 °C unless otherwise specifiedCharacteristicsCollector-Cutoff CurrentGate Leakage CurrentGate-Emitter Threshold VoltageCollector-Emitter Saturation VoltageTotal Gate ChargeEmitter-Collector VoltageSymbolICESIGESVGE(th)VCE(sat)QGVECTest ConditionsVCE = VCES, VGE = 0VVGE = VGES, VCE = 0VIC = 20mA, VCE = 10VIC = 200A, VGE = 15VIC = 200A, VGE = 15V, Tj = 150°CVCC = 600V, IC = 200A, VGE = 15VIE = 200A, VGE = 0VMin.––4.5––––Typ.––6.02.52.251000–Max.1.00.57.53.4**––3.5UnitsmAµAVoltsVoltsVoltsnCVolts** Pulse width and repetition rate should be such that device junction temperature rise is negligible.Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specifiedCharacteristicsInput CapacitanceOutput CapacitanceReverse Transfer CapacitanceResistiveLoadSwitchingTimesTurn-on Delay TimeRise TimeTurn-off Delay TimeFall TimeSymbolCiesCoesCrestd(on)trtd(off)tftrrQrrIE = 200A, diE/dt = –400A/µsIE = 200A, diE/dt = –400A/µsVCC = 600V, IC = 200A,VGE1 = VGE2 = 15V, RG = 1.6ΩVGE = 0V, VCE = 10VTest ConditionsMin.–––––––––Typ.––––––––1.49Max. 40 14 8250400300350250–UnitsnFnFnFnsnsnsnsnsµCDiode Reverse Recovery TimeDiode Reverse Recovery ChargeThermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specifiedCharacteristicsThermal Resistance, Junction to CaseThermal Resistance, Junction to CaseContact Thermal ResistanceSymbolRth(j-c)Rth(j-c)Rth(c-f)Test ConditionsPer IGBTPer FWDiPer Module, Thermal Grease AppliedMin.–––Typ.–––Max. 0.0850.18 0.045Units°C/W°C/W°C/WSep.1998
MITSUBISHI IGBT MODULES
CM200DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS(TYPICAL)TRANSFER CHARACTERISTICS(TYPICAL)COLLECTOR-EMITTERSATURATION VOLTAGE CHARACTERISTICS(TYPICAL)400 COLLECTOR CURRENT, IC, (AMPERES)400 COLLECTOR CURRENT, IC, (AMPERES)320VGE = 20V11320 COLLECTOR-EMITTERSATURATION VOLTAGE, VCE(sat), (VOLTS)Tj = 25Co15125VCE = 10VTj = 25°CTj = 125°CVGE = 15VTj = 25°CTj = 125°C42401024031608071608002981002468100481216200080160240320400COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)GATE-EMITTER VOLTAGE, VGE, (VOLTS)COLLECTOR-CURRENT, IC, (AMPERES)COLLECTOR-EMITTERSATURATION VOLTAGE CHARACTERISTICS(TYPICAL)FREE-WHEEL DIODEFORWARD CHARACTERISTICS(TYPICAL)CAPACITANCE VS. VCE(TYPICAL)10 COLLECTOR-EMITTERSATURATION VOLTAGE, VCE(sat), (VOLTS)103Tj = 25°CEMITTER CURRENT, IE, (AMPERES)7Tj = 25°C CAPACITANCE, Cies, Coes, Cres, (nF)102Cies5328IC = 400A101Coes6IC = 200A10275324100VGE = 0VCres2IC = 80A00481216201011.01.52.02.53.03.510-110-1100101102GATE-EMITTER VOLTAGE, VGE, (VOLTS)EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)HALF-BRIDGESWITCHING CHARACTERISTICS(TYPICAL)REVERSE RECOVERY CHARACTERISTICS(TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES)GATE CHARGE, VGE103 REVERSE RECOVERY TIME, trr, (ns)103tftd(off)10220 GATE-EMITTER VOLTAGE, VGE, (VOLTS)IC = 200A16SWITCHING TIME, (ns)VCC = 400VVCC = 600Vtd(on)Irr102102trr121018trVCC = 600VVGE = ±15VRG = 1.6ΩTj = 125°Cdi/dt = -400A/µsecTj = 25°C4101101102COLLECTOR CURRENT, IC, (AMPERES)103101101100102EMITTER CURRENT, IE, (AMPERES)1030040080012001600GATE CHARGE, QG, (nC)Sep.1998
MITSUBISHI IGBT MODULES
CM200DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)Zth = Rth • (NORMALIZED VALUE)100Zth = Rth • (NORMALIZED VALUE)Single PulseTC = 25°CPer Unit Base = Rth(j-c) = 0.085°C/W NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)TRANSIENT THERMALIMPEDANCE CHARACTERISTICS(IGBT)-3-2101010-1100101101TRANSIENT THERMALIMPEDANCE CHARACTERISTICS(FWDi)-3-2101010-1100101101100Single PulseTC = 25°CPer Unit Base = Rth(j-c) = 0.18°C/W10-110-110-110-110-210-210-210-210-310-5TIME, (s)10-410-310-310-310-5TIME, (s)10-410-310-3Sep.1998
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