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专利名称：Method of manufacturing an amorphous
silicon layer, and electronic device applyingthis method
发明人：DIEUMEGARD, DOMINIQUE,FRIEDERICH,
ALAIN
申请号：EP81401156.5申请日：19810721公开号：EP0045676A1公开日：19820210
专利附图：
摘要：1. A process of making a laser of hydrogen-containing amorphous silicon (101)
including a step of depositing said layer of amorphous silicon on a support (100),characterized by comprising the following sequence of steps : a) applying a metal skin(102) onto said layer of amorphous silicon (101), the metal being selected from the groupcomprising those having a high affinity to atomic hydrogen, and said metal skin having athickness of at least 0.5 nm ; b) hydrogenating said metal skin (102) ; c) performing athermal treatment between 100 degrees C and the crystallization temperature of thesilicon, said treatment resulting in the diffusion of hydrogen from said metal skin, whichthen acts as a source of atomic hydrogen, into said layer of amorphous silicon.
申请人：THOMSON-CSF
地址：173, Boulevard Haussmann 75008 Paris FR
国籍：FR
代理机构：Lepercque, Jean
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