MRF8S23120HR3;MRF8S23120HR5;MRF8S23120HSR3;MRF8S23120HSR5;中文规格书,Datasheet资料

DocumentNumber:MRF8S23120H

Rev.0,11/2010

RFPowerFieldEffectTransistors

N--ChannelEnhancement--ModeLateralMOSFETs

DesignedforLTEbasestationapplicationswithfrequenciesfrom2300to2400MHz.CanbeusedinClassABandClassCforalltypicalcellularbasestationmodulationformats.

•TypicalSingle--CarrierW--CDMAPerformance:VDD=28Volts,IDQ=800mA,Pout=28WattsAvg.,IQMagnitudeClipping,Channel

Bandwidth=3.84MHz,InputSignalPAR=7.5dB@0.01%ProbabilityonCCDF.

Frequency2300MHz2350MHz2400MHz

Gps(dB)16.016.316.6

ηD(%)31.930.931.2

OutputPAR

(dB)

6.16.46.3

ACPR(dBc)--37.1--37.9--37.5

MRF8S23120HR3MRF8S23120HSR32300--2400MHz,28WAVG.,28VLTELATERALN--CHANNELRFPOWERMOSFETs•CapableofHandling5:1VSWR,@30Vdc,2350MHz,138WattsCW(1)

OutputPower(2dBInputOverdrivefromRatedPout)•TypicalPout@1dBCompressionPoint≃107WattsCWFeatures

•100%PARTestedforGuaranteedOutputPowerCapability

•CharacterizedwithSeriesEquivalentLarge--SignalImpedanceParametersandCommonSourceS--Parameters•InternallyMatchedforEaseofUse•IntegratedESDProtection

•GreaterNegativeGate--SourceVoltageRangeforImprovedClassCOperation

•DesignedforDigitalPredistortionErrorCorrectionSystems•OptimizedforDohertyApplications•RoHSCompliant

•InTapeandReel.R3Suffix=250Units,56mmTapeWidth,13inchReel.Table1.MaximumRatings

Rating

Drain--SourceVoltageGate--SourceVoltageOperatingVoltage

StorageTemperatureRangeCaseOperatingTemperatureOperatingJunctionTemperature(2,3)CWOperation@TC=25°CDerateabove25°C

SymbolVDSSVGSVDDTstgTCTJCW

CASE465--06,STYLE1NI--780MRF8S23120HR3CASE465A--06,STYLE1NI--780SMRF8S23120HSR3Value--0.5,+65--6.0,+1032,+0--65to+150

1502251090.52

UnitVdcVdcVdc°C°C°CWW/°C

Table2.ThermalCharacteristics

Characteristic

ThermalResistance,JunctiontoCase

CaseTemperature76°C,28WCW,28Vdc,IDQ=800mA,2400MHzCaseTemperature80°C,120WCW(1),28Vdc,IDQ=800mA,2400MHz

SymbolRθJC

Value(3,4)

0.500.47

Unit°C/W

1.Exceedsrecommendedoperatingconditions.SeeCWoperationdatainMaximumRatingstable.2.ContinuoususeatmaximumtemperaturewillaffectMTTF.

3.MTTFcalculatoravailableathttp://www.freescale.com/rf.SelectSoftware&Tools/DevelopmentTools/CalculatorstoaccessMTTFcalculatorsbyproduct.

4.RefertoAN1955,ThermalMeasurementMethodologyofRFPowerAmplifiers.Gotohttp://www.freescale.com/rf.SelectDocumentation/ApplicationNotes--AN1955.©FreescaleSemiconductor,Inc.,2010.Allrightsreserved.MRF8S23120HR3MRF8S23120HSR31RFDeviceDataFreescaleSemiconductorhttp://oneic.com/Table3.ESDProtectionCharacteristics

TestMethodology

HumanBodyModel(perJESD22--A114)MachineModel(perEIA/JESD22--A115)ChargeDeviceModel(perJESD22--C101)

Class2(Minimum)A(Minimum)IV(Minimum)

SymbolIDSSIDSSIGSS

Min———

Typ———

Max1011

UnitμAdcμAdcμAdc

Table4.ElectricalCharacteristics(TA=25°Cunlessotherwisenoted)

Characteristic

OffCharacteristics

ZeroGateVoltageDrainLeakageCurrent(VDS=65Vdc,VGS=0Vdc)

ZeroGateVoltageDrainLeakageCurrent(VDS=28Vdc,VGS=0Vdc)Gate--SourceLeakageCurrent(VGS=5Vdc,VDS=0Vdc)OnCharacteristics

GateThresholdVoltage

(VDS=10Vdc,ID=172μAdc)

GateQuiescentVoltage

(VDD=28Vdc,ID=800mAdc,MeasuredinFunctionalTest)Drain--SourceOn--Voltage

(VGS=10Vdc,ID=1.72Adc)

VGS(th)VGS(Q)VDS(on)

1.01.80.1

1.82.60.15

2.53.30.3

VdcVdcVdc

FunctionalTests(1)(InFreescaleTestFixture,50ohmsystem)VDD=28Vdc,IDQ=800mA,Pout=28WAvg.,f=2300MHz,

Single--CarrierW--CDMA,IQMagnitudeClipping,InputSignalPAR=7.5dB@0.01%ProbabilityonCCDF.ACPRmeasuredin3.84MHzChannelBandwidth@±5MHzOffset.PowerGainDrainEfficiency

OutputPeak--to--AverageRatio@0.01%ProbabilityonCCDFAdjacentChannelPowerRatioInputReturnLoss

GpsηDPARACPRIRL

14.529.05.7——

16.031.96.1--37.1--12

17.5——--35.0--7

dB%dBdBcdB

TypicalBroadbandPerformance(InFreescaleTestFixture,50ohmsystem)VDD=28Vdc,IDQ=800mA,Pout=28WAvg.,

Single--CarrierW--CDMA,IQMagnitudeClipping,InputSignalPAR=7.5dB@0.01%ProbabilityonCCDF.ACPRmeasuredin3.84MHzChannelBandwidth@±5MHzOffset.

Frequency2300MHz2350MHz2400MHz

1.Partinternallymatchedbothoninputandoutput.

(continued)

Gps(dB)16.016.316.6

ηD(%)31.930.931.2

OutputPAR

(dB)

6.16.46.3

ACPR(dBc)--37.1--37.9--37.5

IRL(dB)--12--19--18

MRF8S23120HR3MRF8S23120HSR32

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Table4.ElectricalCharacteristics(TA=25°Cunlessotherwisenoted)(continued)

Characteristic

Symbol

Min——

Typ10713

Max——

UnitWMHz

TypicalPerformances(InFreescaleTestFixture,50ohmsystem)VDD=28Vdc,IDQ=800mA,2300--2400MHzBandwidthPout@1dBCompressionPoint,CW

IMDSymmetry@84WPEP,PoutwhereIMDThirdOrderIntermodulation30dBc

(DeltaIMDThirdOrderIntermodulationbetweenUpperandLowerSidebands>2dB)VBWResonancePoint

(IMDThirdOrderIntermodulationInflectionPoint)GainFlatnessin100MHzBandwidth@Pout=28WAvg.GainVariationoverTemperature(--30°Cto+85°C)

OutputPowerVariationoverTemperature(--30°Cto+85°C)(1)

P1dBIMDsym

VBWresGF∆G∆P1dB

————

620.60.0020.008

————

MHzdBdB/°CdB/°C

1.Exceedsrecommendedoperatingconditions.SeeCWoperationdatainMaximumRatingstable.

MRF8S23120HR3MRF8S23120HSR3

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3

B1C16C8C14C6*R1C4CUTOUTAREAC13C2C5C1C15C3C7*C10C12MRF8S23120H/SRev.0*C6andC7aremountedvertically.

Figure1.MRF8S23120HR3(HSR3)TestCircuitComponentLayout

Table5.MRF8S23120HR3(HSR3)TestCircuitComponentDesignationsandValues

Part

B1C1,C4C2,C15C3C5,C6,C7C8

C9,C10,C11,C12,C14C13C16R1PCB

FerriteBead

5.6pFChipCapacitors0.5pFChipCapacitors1.8pFChipCapacitor8.2pFChipCapacitors3.3μF,100VChipCapacitor10μF,50VChipCapacitors470μF,63VElectrolyticCapacitor330nF,100VChipCapacitor4.75Ω,1/4WChipResistor0.030″,εr=2.55

Description

PartNumber

MPZ2012S300AATC100B5R6CT500XTATC100B0R5BT500XTATC100B1R5BT500XTATC100B8R2CT500XTC5750X7R2A335MTC5750X7R1H106KTMCGPR63V477M13X26--RHC3225JB2A334KTCRCW120R75FNEAAD255A

ManufacturerTDKATCATCATCATCTDKTDKMulticompTDKVishayArlon

MRF8S23120HR3MRF8S23120HSR34

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+C9C11TYPICALCHARACTERISTICS

VDD=28Vdc,Pout=28W(Avg.),IDQ=800mASingle--CarrierW--CDMA,3.84MHzChannelBandwidthInputSignalPAR=7.5dB@0.01%ProbabilityonCCDFηD,DRAINEFFICIENCY(%)17.21716.8Gps,POWERGAIN(dB)16.616.416.21615.815.615.415.22290ACPR2305232023352350236523802395IRLGpsPARCηD3433323130--34--35

ACPR(dBc)--36--37--38--392410IRL,INPUTRETURNLOSS(dB)--10--15--20--25--30--35

--1--1.2--1.4--1.6--1.8--2

PARC(dB)f,FREQUENCY(MHz)Figure2.OutputPeak--to--AverageRatioCompression(PARC)BroadbandPerformance@Pout=28WattsAvg.--10--20--30--40--50--60

IMD,INTERMODULATIONDISTORTION(dBc)VDD=28Vdc,Pout=84W(PEP),IDQ=800mATwo--ToneMeasurements(f1+f2)/2=CenterFrequencyof2350MHzIM3--UIM3--LIM5--UIM5--LIM7--LIM7--U110TWO--TONESPACING(MHz)100Figure3.IntermodulationDistortionProductsversusTwo--ToneSpacing17

OUTPUTCOMPRESSIONAT0.01%PROBABILITYONCCDF(dB)16.6Gps,POWERGAIN(dB)16.215.815.41514.6

10--1--2--3--4--5

ACPR--1dB=26.5W--2dB=36.5WPARCGps201006560

ηD,DRAINEFFICIENCY(%)50

ηD4030

--20--25--30--35--40--45--50

ACPR(dBc)VDD=28Vdc,IDQ=800mA,f=2350MHzSingle--CarrierW--CDMA,3.84MHzChannelBandwidth--3dB=48.5WInputSignalPAR=7.5dB@0.01%ProbabilityonCCDF15

25

35

45

55

Pout,OUTPUTPOWER(WATTS)

Figure4.OutputPeak--to--AverageRatio

Compression(PARC)versusOutputPower

MRF8S23120HR3MRF8S23120HSR3

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TYPICALCHARACTERISTICS

17.516.5Gps,POWERGAIN(dB)15.514.5

2400MHz2350MHzGpsηD6050ηD,DRAINEFFICIENCY(%)4030

2400MHz2350MHz20100100

0--10--20--30--40--50--60

ACPR(dBc)+ACPRin3.84MHzIntegratedBW1.8

3.6

2300MHzVDD=28Vdc,IDQ=800mA2400MHzSingle--CarrierW--CDMA3.84MHzChannelBandwidth13.5InputSignalPAR=7.5dB@0.01%ProbabilityonCCDF12.511.5

1

ACPR10

2300MHz2350MHz2300MHzPout,OUTPUTPOWER(WATTS)AVG.

Figure5.Single--CarrierW--CDMAPowerGain,Drain

EfficiencyandACPRversusOutputPower

242016GAIN(dB)12

IRL8401800

--20--30--402600

VDD=28VdcPin=0dBmIDQ=800mA2010

Gain0--10

IRL(dB)3.84MHzChannelBW0

1900200021002200230024002500

f,FREQUENCY(MHz)

Figure6.BroadbandFrequencyResponse

W--CDMATESTSIGNAL

10010

PROBABILITY(%)1

InputSignal0.1

(dB)W--CDMA.ACPRMeasuredin3.84MHzChannelBandwidth@±5MHzOffset.InputSignalPAR=7.5dB@0.01%ProbabilityonCCDF0

1

2

3

4

5

6

7

8

9

10

PEAK--TO--AVERAGE(dB)

0.010.0010.0001

100--10--20--30--40--50--60--70--80--90--100

--9

--7.2--5.4

--3.6--1.8

5.4

7.2

9

f,FREQUENCY(MHz)

--ACPRin3.84MHzIntegratedBWFigure7.CCDFW--CDMAIQMagnitude

Clipping,Single--CarrierTestSignal

MRF8S23120HR3MRF8S23120HSR36

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Figure8.Single--CarrierW--CDMASpectrum

RFDeviceData

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VDD=28Vdc,IDQ=800mA,Pout=28WAvg.fMHz229023052320233523502365238023952410

Zsource

Ω8.41--j0.978.58--j0.558.78--j0.148.99+j0.299.21+j0.729.45+j1.179.71+j1.629.99+j2.1010.28+j2.60

ZloadΩ1.86--j4.431.83--j4.281.80--j4.141.77--j4.011.74--j3.881.72--j3.771.69--j3.661.66--j3.541.65--j3.43

Zsource=Testcircuitimpedanceasmeasuredfrom

gatetoground.Zload

=Testcircuitimpedanceasmeasuredfromdraintoground.

DeviceUnderTestOutputMatchingNetwork

InputMatchingNetworkZ

source

Z

load

Figure9.SeriesEquivalentSourceandLoadImpedance

MRF8S23120HR3MRF8S23120HSR3

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7

ALTERNATIVEPEAKTUNELOADPULLCHARACTERISTICS

VDD=28Vdc,IDQ=800mA,PulsedCW,10μsec(on),10%DutyCycle5756Pout,OUTPUTPOWER(dBm)5554535251504948474629

30

31

32

33

34

35

36

37

38

39

40

2350MHz2300MHz2400MHzActual2300MHz2400MHz2350MHzIdealPin,INPUTPOWER(dBm)

NOTE:LoadPullTestFixtureTunedforPeakP1dBOutputPower@28V

f(MHz)230023502400

P1dBWatts152150147

dBm51.851.851.7

185181177

P3dBWatts

dBm52.752.652.5

TestImpedancesperCompressionLevel

f(MHz)230023502400

P1dBP1dBP1dB

Zsource

Ω4.03--j5.454.63--j6.155.57--j5.96

ZloadΩ2.24+j0.082.21+j0.352.36+j0.47

Figure10.PulsedCWOutputPower

versusInputPower@28V

MRF8S23120HR3MRF8S23120HSR38

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PACKAGEDIMENSIONS

MRF8S23120HR3MRF8S23120HSR3

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9

MRF8S23120HR3MRF8S23120HSR310

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分销商库存信息:

FREESCALEMRF8S23120HR3MRF8S23120HSR5

MRF8S23120HR5

MRF8S23120HSR3