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专利名称：POWER AMPLIFYING DEVICE发明人：Shaojun MA,Yasunari UMEMOTO,Kenji
SASAKI
申请号：US172104申请日：20210329
公开号：US20210305949A1公开日：20210930
专利附图：
摘要：Multiple bipolar transistors are disposed side by side in the first direction on asubstrate. Multiple first capacitance devices are provided corresponding to the
respective base electrodes of the bipolar transistors. A radio frequency signal is supplied
to the bipolar transistors through the first capacitance devices. Resistive devices areprovided corresponding to the respective base electrodes of the bipolar transistors. Abase bias is supplied to the bipolar transistors through the resistive devices. The firstcapacitance devices are disposed on the same side relative to the second directionorthogonal to the first direction, when viewed from the bipolar transistors. At least oneof the first capacitance devices is disposed so as to overlap another first capacitancedevice partially when viewed in the second direction from the bipolar transistors.
申请人：Murata Manufacturing Co., Ltd.
地址：Kyoto-fu JP
国籍：JP
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